BD241C-S
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- Mfr.Part #
- BD241C-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220
- Stock
- 13,087
- In Stock ：
- 13,087
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 40W
- Power Dissipation :
- 40W
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tube
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Number of Elements :
- 1
- Base Part Number :
- BD241
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Published :
- 1993
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 300μA
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Datasheets
- BD241C-S
NPN -65°C~150°C TJ 300μA 1 Elements NPN TO-220-3 Tube Through Hole
BD241C-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 600mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
BD241C-S Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
BD241C-S Applications
There are a lot of Bourns Inc.
BD241C-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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