BD241C

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Mfr.Part #
BD241C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 3A TO220
Stock
7,562
In Stock :
7,562

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
10.4mm
JEDEC-95 Code :
TO-220AB
Operating Temperature :
150°C TJ
REACH SVHC :
No SVHC
Collector Emitter Breakdown Voltage :
100V
Number of Terminations :
3
Max Collector Current :
3A
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 3A 4V
Width :
4.6mm
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Current - Collector Cutoff (Max) :
300μA
RoHS Status :
ROHS3 Compliant
Contact Plating :
Tin
Pin Count :
3
Base Part Number :
BD241
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Polarity/Channel Type :
NPN
Transistor Type :
NPN
Mount :
Through Hole
ECCN Code :
EAR99
Transition Frequency :
3MHz
Number of Pins :
3
Factory Lead Time :
8 Weeks
Collector Emitter Saturation Voltage :
1.2V
Number of Elements :
1
Mounting Type :
Through Hole
Height :
9.15mm
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
100V
Radiation Hardening :
No
Packaging :
Tube
Max Power Dissipation :
40W
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 600mA, 3A
Package / Case :
TO-220-3
hFE Min :
25
Power Dissipation :
40W
Datasheets
BD241C
Introducing Transistors - Bipolar (BJT) - Single onsemi BD241C from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BD241, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, BD241C pinout, BD241C datasheet PDF, BD241C amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD241C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD241C


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD241C Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

BD241C Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD241C Applications


There are a lot of STMicroelectronics
BD241C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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