BD241C

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Mfr.Part #
BD241C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 3A TO220
Stock
7,562
In Stock :
7,562

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
9.15mm
Factory Lead Time :
8 Weeks
Transistor Element Material :
SILICON
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.2V
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Pin Count :
3
Package / Case :
TO-220-3
Base Part Number :
BD241
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 600mA, 3A
Transistor Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
RoHS Status :
ROHS3 Compliant
Transition Frequency :
3MHz
Mounting Type :
Through Hole
ECCN Code :
EAR99
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
100V
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
NPN
Width :
4.6mm
Max Power Dissipation :
40W
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 3A 4V
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
100V
Number of Elements :
1
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Mount :
Through Hole
Current - Collector Cutoff (Max) :
300μA
Number of Terminations :
3
REACH SVHC :
No SVHC
hFE Min :
25
Length :
10.4mm
Max Collector Current :
3A
Operating Temperature :
150°C TJ
Power Dissipation :
40W
Introducing Transistors - Bipolar (BJT) - Single onsemi BD241C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BD241, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, BD241C pinout, BD241C datasheet PDF, BD241C amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD241C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD241C


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD241C Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

BD241C Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD241C Applications


There are a lot of STMicroelectronics
BD241C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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