BD241C

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Mfr.Part #
BD241C
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 3A TO220
Stock
7,562
In Stock :
7,562

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Contact Plating :
Tin
Transition Frequency :
3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 3A 4V
Factory Lead Time :
8 Weeks
Max Collector Current :
3A
Width :
4.6mm
Height :
9.15mm
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
100V
REACH SVHC :
No SVHC
Packaging :
Tube
Number of Terminations :
3
Package / Case :
TO-220-3
Power Dissipation :
40W
Element Configuration :
Single
Pin Count :
3
Length :
10.4mm
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
JEDEC-95 Code :
TO-220AB
Collector Emitter Saturation Voltage :
1.2V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Transistor Element Material :
SILICON
Max Power Dissipation :
40W
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
NPN
hFE Min :
25
JESD-609 Code :
e3
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage :
100V
Number of Elements :
1
Mount :
Through Hole
Base Part Number :
BD241
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
300μA
Datasheets
BD241C
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD241C from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:BD241, BD241C pinout, BD241C datasheet PDF, BD241C amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD241C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD241C


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD241C Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

BD241C Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD241C Applications


There are a lot of STMicroelectronics
BD241C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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