BCX42E6327HTSA1
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- Mfr.Part #
- BCX42E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 125V 0.8A SOT23
- Stock
- 25,093
- In Stock ：
- 25,093
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -125V
- ECCN Code :
- EAR99
- hFE Min :
- 25
- Current Rating :
- -800mA
- Voltage :
- 125V
- Power Dissipation :
- 330mW
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 125V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 900mV
- Transistor Application :
- SWITCHING
- Frequency :
- 150MHz
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Transistor Type :
- PNP
- Published :
- 2011
- Collector Base Voltage (VCBO) :
- 125V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Current :
- 8A
- Mount :
- Surface Mount
- Height :
- 1.1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Max Junction Temperature (Tj) :
- 150°C
- Halogen Free :
- Not Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 125V
- Collector Emitter Breakdown Voltage :
- 125V
- Base Part Number :
- BCX42
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 800mA
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 330mW
- Datasheets
- BCX42E6327HTSA1
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX42E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 200mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 900mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 900mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 125V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BCX42E6327HTSA1 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 150MHz
BCX42E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX42E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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