BCX42E6433HTMA1
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- Mfr.Part #
- BCX42E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 125V 0.8A SOT23
- Stock
- 12,985
- In Stock ：
- 12,985
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 330mW
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 125V
- Voltage - Rated DC :
- -125V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 10μA
- Max Collector Current :
- 800mA
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Configuration :
- Single
- Power Dissipation :
- 330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 125V
- Collector Emitter Voltage (VCEO) :
- 125V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 800mA
- Frequency :
- 150MHz
- Base Part Number :
- BCX42
- Transition Frequency :
- 150MHz
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BCX42E6433HTMA1
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX42E6433HTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 200mA 1V.When VCE saturation is 900mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -800mA.In the part, the transition frequency is 150MHz.A maximum collector current of 800mA volts can be achieved.
BCX42E6433HTMA1 Features
the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 150MHz
BCX42E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCX42E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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