BCX41E6327HTSA1
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- Mfr.Part #
- BCX41E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 125V 0.8A SOT23
- Stock
- 27,050
- In Stock ：
- 27,050
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Voltage - Rated DC :
- 125V
- Published :
- 2011
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Width :
- 1.3mm
- Collector Emitter Voltage (VCEO) :
- 1V
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Voltage :
- 125V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 125V
- Height :
- 900μm
- Terminal Position :
- Dual
- Max Power Dissipation :
- 330mW
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 2.9mm
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 125V
- Current :
- 8A
- Current Rating :
- 800mA
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 330mW
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BCX41
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Halogen Free :
- Not Halogen Free
- Collector Emitter Saturation Voltage :
- 900mV
- ECCN Code :
- EAR99
- hFE Min :
- 63
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Collector Emitter Breakdown Voltage :
- 125V
- Polarity/Channel Type :
- NPN
- Datasheets
- BCX41E6327HTSA1
NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX41E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 1V.With a collector emitter saturation voltage of 900mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 125V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BCX41E6327HTSA1 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCX41E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX41E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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