BCX41E6327HTSA1
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- Mfr.Part #
- BCX41E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 125V 0.8A SOT23
- Stock
- 27,050
- In Stock ：
- 27,050
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Current :
- 8A
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 125V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Height :
- 900μm
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BCX41
- Published :
- 2011
- hFE Min :
- 63
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 330mW
- Collector Emitter Voltage (VCEO) :
- 1V
- Length :
- 2.9mm
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 800mA
- Current Rating :
- 800mA
- Collector Emitter Saturation Voltage :
- 900mV
- Pbfree Code :
- yes
- Width :
- 1.3mm
- Power Dissipation :
- 330mW
- Current - Collector Cutoff (Max) :
- 10μA
- Mounting Type :
- Surface Mount
- Voltage :
- 125V
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Not Halogen Free
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 125V
- Voltage - Rated DC :
- 125V
- Collector Base Voltage (VCBO) :
- 125V
- Factory Lead Time :
- 4 Weeks
- Datasheets
- BCX41E6327HTSA1
BCX41E6327HTSA1 Documents
NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX41E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 1V.With a collector emitter saturation voltage of 900mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 125V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BCX41E6327HTSA1 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCX41E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX41E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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