BCX19T116
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- Mfr.Part #
- BCX19T116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SST3
- Stock
- 3,324
- In Stock ：
- 3,324
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e1
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- VCEsat-Max :
- 0.7 V
- Base Part Number :
- BCX19
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Lead Free :
- Lead Free
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Current Rating :
- 500mA
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Operating Temperature :
- 150°C TJ
- Continuous Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- HTS Code :
- 8541.21.00.95
- Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 620mV
- Collector Emitter Saturation Voltage :
- 620mV
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 13 Weeks
- Power - Max :
- 350mW
- Number of Pins :
- 3
- Max Power Dissipation :
- 425mW
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 250MHz
- Max Collector Current :
- 500mA
- Transition Frequency :
- 100MHz
- Terminal Finish :
- TIN SILVER COPPER
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BCX19T116
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX19T116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 620mV, which allows for maximum design flexibility.When VCE saturation is 620mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BCX19T116 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
BCX19T116 Applications
There are a lot of ROHM Semiconductor
BCX19T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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