BCX18,215
- Mfr.Part #
- BCX18,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA BCX18 - SMALL SIGNA
- Stock
- 8,731
- In Stock :
- 8,731
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 80MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 80MHz
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 25V
- Base Part Number :
- BCX18
- Number of Terminations :
- 3
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 80MHz
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 25V
- VCEsat-Max :
- 0.62 V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 100
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Datasheets
- BCX18,215
BCX18,215 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX18,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 80MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.
BCX18,215 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
BCX18,215 Applications
There are a lot of Nexperia USA Inc.
BCX18,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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