BCX17LT1G
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- Mfr.Part #
- BCX17LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Current Rating :
- -500mA
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Max Collector Current :
- 500mA
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Type :
- PNP
- Width :
- 1.3mm
- Height :
- 940μm
- Base Part Number :
- BCX17
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -45V
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 620mV
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 100
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Cut Tape (CT)
- Published :
- 2004
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Terminations :
- 3
- Datasheets
- BCX17LT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCX17LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 620mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 620mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCX17LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
BCX17LT1G Applications
There are a lot of ON Semiconductor
BCX17LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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