BCW68GE6327HTSA1
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- Mfr.Part #
- BCW68GE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23
- Stock
- 7,035
- In Stock ：
- 7,035
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -800mA
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 330mW
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -45V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Pins :
- 3
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 45V
- Frequency :
- 200MHz
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 2V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 800mA
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 45V
- Base Part Number :
- BCW68
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Transition Frequency :
- 200MHz
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 700mV
- Terminal Position :
- Dual
- Halogen Free :
- Not Halogen Free
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 700mV
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Height :
- 900μm
- Max Power Dissipation :
- 330mW
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Width :
- 1.3mm
- ECCN Code :
- EAR99
- Datasheets
- BCW68GE6327HTSA1
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68GE6327HTSA1 Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 2V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -800mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 800mA volts.
BCW68GE6327HTSA1 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz
BCW68GE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW68GE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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