BCW66KHE6327HTSA1
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- Mfr.Part #
- BCW66KHE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23
- Stock
- 162,321
- In Stock ：
- 162,321
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Frequency :
- 170MHz
- Base Part Number :
- BCW66
- Max Junction Temperature (Tj) :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- hFE Min :
- 250
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Factory Lead Time :
- 4 Weeks
- Published :
- 2007
- Halogen Free :
- Not Halogen Free
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 75V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Length :
- 2.9mm
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transition Frequency :
- 170MHz
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Max Collector Current :
- 800mA
- Width :
- 1.3mm
- Height :
- 1.1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 300mV
- Datasheets
- BCW66KHE6327HTSA1
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66KHE6327HTSA1 Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 450mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 170MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 800mA volts is possible.
BCW66KHE6327HTSA1 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BCW66KHE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW66KHE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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