BCW65CLT1G
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- Mfr.Part #
- BCW65CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 84
- In Stock ：
- 84
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 2 Weeks
- Length :
- 3.04mm
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Surface Mount :
- yes
- Turn Off Time-Max (toff) :
- 400ns
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Base Part Number :
- BCW65
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 20nA
- Height :
- 1.11mm
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Voltage - Rated DC :
- 32V
- Number of Elements :
- 1
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 32V
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Current Rating :
- 800mA
- Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 80
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- Max Collector Current :
- 800mA
- Max Power Dissipation :
- 225mW
- Datasheets
- BCW65CLT1G
BCW65CLT1G Documents
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65CLT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65CLT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65CLT1G Applications
There are a lot of ON Semiconductor
BCW65CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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