BCW65CLT1G
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- Mfr.Part #
- BCW65CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 84
- In Stock ：
- 84
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- Pin Count :
- 3
- Turn Off Time-Max (toff) :
- 400ns
- Voltage - Rated DC :
- 32V
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Length :
- 3.04mm
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- yes
- hFE Min :
- 80
- Terminal Form :
- Gull wing
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 60V
- Base Part Number :
- BCW65
- Width :
- 1.4mm
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 20nA
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 32V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 32V
- Max Collector Current :
- 800mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 225mW
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 32V
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 800mA
- Height :
- 1.11mm
- Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Datasheets
- BCW65CLT1G
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65CLT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65CLT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65CLT1G Applications
There are a lot of ON Semiconductor
BCW65CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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