BCW61CE6327HTSA1
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- Mfr.Part #
- BCW61CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 35,840
- In Stock ：
- 35,840
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Base Part Number :
- BCW61
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- PNP
- Published :
- 2011
- Current - Collector (Ic) (Max) :
- 100mA
- Pbfree Code :
- yes
- Power - Max :
- 330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Voltage - Collector Emitter Breakdown (Max) :
- 32V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Configuration :
- Single
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-G3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Datasheets
- BCW61CE6327HTSA1
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61CE6327HTSA1 Overview
In this device, the DC current gain is 250 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.There is a 32V maximal voltage in the device due to collector-emitter breakdown.
BCW61CE6327HTSA1 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 250MHz
BCW61CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW61CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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