BCW61C
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- Mfr.Part #
- BCW61C
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 2,262
- In Stock ：
- 2,262
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 32V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 250mW
- Collector Base Voltage (VCBO) :
- 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Published :
- 2009
- Base Part Number :
- BCW61
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Turn Off Time-Max (toff) :
- 800ns
- Collector Emitter Voltage (VCEO) :
- 32V
- Max Breakdown Voltage :
- 32V
- Additional Feature :
- LOW NOISE
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Datasheets
- BCW61C
BCW61C Documents
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61C,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BCW61C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW61C,235 Applications
There are a lot of Nexperia USA Inc.
BCW61C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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