BCW61C

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Turn Off Time-Max (toff) :

800ns

Additional Feature :

LOW NOISE

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

100MHz

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 2mA 5V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

32V

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

PNP

Operating Temperature :

150°C TJ

Power Dissipation :

250mW

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP

Frequency :

100MHz

Factory Lead Time :

4 Weeks

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Mount :

Surface Mount

JESD-609 Code :

e3

Published :

2009

Base Part Number :

BCW61

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

3

Element Configuration :

Single

Transition Frequency :

100MHz

Mounting Type :

Surface Mount

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

550mV @ 1.25mA, 50mA

Collector Base Voltage (VCBO) :

32V

Contact Plating :

Tin

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

32V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Max Breakdown Voltage :

32V

Max Power Dissipation :

250mW

Current - Collector Cutoff (Max) :

20nA ICBO