BCW61BE6327HTSA1

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Mfr.Part #
BCW61BE6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 32V 0.1A SOT23
Stock
3,000
In Stock :
3,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
32V
Power - Max :
330mW
JESD-30 Code :
R-PDSO-G3
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 2mA 5V
Mounting Type :
Surface Mount
Surface Mount :
yes
Qualification Status :
Not Qualified
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Package / Case :
TO-236-3, SC-59, SOT-23-3
Published :
2011
Transistor Type :
PNP
Terminal Form :
Gull wing
Pbfree Code :
yes
Terminal Position :
Dual
Transition Frequency :
250MHz
Transistor Element Material :
SILICON
Base Part Number :
BCW61
Frequency - Transition :
250MHz
Configuration :
Single
Current - Collector Cutoff (Max) :
20nA ICBO
Current - Collector (Ic) (Max) :
100mA
Number of Terminations :
3
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
550mV @ 1.25mA, 50mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Datasheets
BCW61BE6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCW61BE6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:BCW61, Number of Terminations:3, BCW61BE6327HTSA1 pinout, BCW61BE6327HTSA1 datasheet PDF, BCW61BE6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCW61BE6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCW61BE6327HTSA1


PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BCW61BE6327HTSA1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 250MHz.The device has a 32V maximal voltage - Collector Emitter Breakdown.

BCW61BE6327HTSA1 Features


the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 250MHz


BCW61BE6327HTSA1 Applications


There are a lot of Infineon Technologies
BCW61BE6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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