BCW60CE6327HTSA1
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- Mfr.Part #
- BCW60CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT-23
- Stock
- 619,912
- In Stock ：
- 619,912
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Terminal Position :
- Dual
- Voltage - Collector Emitter Breakdown (Max) :
- 32V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Power - Max :
- 330mW
- JESD-30 Code :
- R-PDSO-G3
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCW60
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Published :
- 2007
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency - Transition :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Transition Frequency :
- 250MHz
- Current - Collector (Ic) (Max) :
- 100mA
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Polarity/Channel Type :
- NPN
- Datasheets
- BCW60CE6327HTSA1
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60CE6327HTSA1 Overview
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 250MHz.Detection of Collector Emitter Breakdown at 32V maximal voltage is present.
BCW60CE6327HTSA1 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 250MHz
BCW60CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW60CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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