BCW60C235
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- Mfr.Part #
- BCW60C235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA SMALL SIGNAL BIPOLA
- Stock
- 4,076
- In Stock ：
- 4,076
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Terminal Position :
- Dual
- Base Part Number :
- BCW60
- hFE Min :
- 40
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- ECCN Code :
- EAR99
- Frequency :
- 250MHz
- Transition Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2001
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 32V
- Collector Base Voltage (VCBO) :
- 32V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Turn Off Time-Max (toff) :
- 800ns
- Max Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Gain Bandwidth Product :
- 250MHz
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Datasheets
- BCW60C235
Specialized ICs NXP Semiconductors BCW60C235 Overview
The Specialized ICs NXP Semiconductors BCW60C235 is a highly efficient, low-power silicon NPN transistor optimized for high performance in compact electronic designs. It offers an impressive DC current gain of 250 at 2mA and 5V, showcasing a robust performance profile suitable for demanding applications. The Vce saturation maximum of 550mV at currents ranging from 1.25mA to 50mA indicates its effectiveness in low-voltage operations. It is also characterized by a transition frequency of 250MHz, which allows for rapid switching capabilities, essential in high-frequency applications. This transistor operates at a collector current up to 100mA, ensuring adaptability in various circuit configurations, making it ideal for specialized industrial applications.
Key Features
DC current gain of 250 at 2mA and 5V enhances component efficiency.
Vce saturation (Max) of 550mV at 1.25mA to 50mA allows for effective performance in varied electrical environments.
Maintains a consistent emitter base voltage at 5V for stable operation.
High transition frequency of 250MHz supports quick switching needs.
Applications
The Specialized ICs NXP Semiconductors BCW60C235 transistor is versatile for various high-demand applications, including:
- Inverter circuits where efficient power conversion is required.
- Interface modules that benefit from its fast switching capabilities.
- Driver components in both digital and analog domains.
- Muting circuits where rapid on-off control is necessary.
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