BCR35PNH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

300mV

Reference Standard :

AEC-Q101

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Width :

1.25mm

Number of Terminations :

6

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Max Collector Current :

100mA

Polarity :

NPN, PNP

Factory Lead Time :

26 Weeks

Element Configuration :

Dual

Max Power Dissipation :

250mW

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

300mV

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Number of Pins :

6

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Published :

2011

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Breakdown Voltage :

50V

Length :

2mm

Height :

800μm

Mount :

Surface Mount

Base Part Number :

BCR35PN

Frequency - Transition :

150MHz

Package / Case :

6-VSSOP, SC-88, SOT-363

hFE Min :

70

Transition Frequency :

150MHz

Resistor - Emitter Base (R2) :

47k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Number of Elements :

2

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Min Operating Temperature :

-65°C

Resistor - Base (R1) :

10k Ω