BCR198E6433HTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

Number of Pins :

3

Frequency - Transition :

190MHz

Transistor Type :

PNP - Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

26 Weeks

Transistor Application :

SWITCHING

Base Part Number :

BCR198

Mount :

Surface Mount

Max Collector Current :

100mA

Terminal Position :

Dual

Current Rating :

-70mA

Resistor - Base (R1) :

47 k Ω

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

ECCN Code :

EAR99

Voltage - Rated DC :

-50V

Published :

2004

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

47 k Ω

Mounting Type :

Surface Mount

Transition Frequency :

190MHz

Polarity :

PNP

Package / Case :

TO-236-3, SC-59, SOT-23-3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Min Operating Temperature :

-65°C

Number of Terminations :

3

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Contact Plating :

Tin