BCR185WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Package Shape :

RECTANGULAR

Subcategory :

BIP General Purpose Small Signals

Package / Case :

SC-70, SOT-323

Number of Elements :

1

Package :

Bulk

Voltage - Collector Emitter Breakdown (Max) :

50 V

Resistor - Emitter Base (R2) :

47 kOhms

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Supplier Device Package :

PG-SOT323-3-1

Collector-Emitter Voltage-Max :

50 V

Power - Max :

250 mW

Collector Current-Max (IC) :

0.1 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Frequency - Transition :

200 MHz

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

10 kOhms

Manufacturer :

Infineon Technologies AG

Mounting Type :

Surface Mount

Product Status :

Active

JESD-30 Code :

R-PDSO-G3

Number of Terminals :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Factory Lead Time :

1 Week

Terminal Finish :

MATTE TIN

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

Power Dissipation-Max (Abs) :

0.25 W

Reach Compliance Code :

Compliant

Terminal Position :

Dual

ECCN Code :

EAR99

DC Current Gain-Min (hFE) :

70

Current - Collector (Ic) (Max) :

100 mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Surface Mount :

yes

Current - Collector Cutoff (Max) :

100nA (ICBO)

Transistor Type :

PNP - Pre-Biased