BCR183E6433HTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

100mA

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Surface Mount :

yes

Resistor - Base (R1) :

10 k Ω

Base Part Number :

BCR183

Number of Terminations :

3

Frequency - Transition :

200MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

200MHz

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Power - Max :

200mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Published :

2011

Transistor Type :

PNP - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Qualification Status :

Not Qualified