BCR183E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Halogen Free :

Not Halogen Free

Max Collector Current :

100mA

Frequency - Transition :

200MHz

Transistor Application :

SWITCHING

Polarity :

PNP

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Number of Elements :

1

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Breakdown Voltage :

50V

Width :

1.3mm

Min Operating Temperature :

-65°C

Packaging :

Tape and Reel (TR)

Published :

2011

Number of Terminations :

3

hFE Min :

30

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

JESD-609 Code :

e3

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

BCR183

Collector Emitter Saturation Voltage :

300mV

Collector Emitter Voltage (VCEO) :

300mV

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-100mA

Max Power Dissipation :

200mW

Radiation Hardening :

No

Voltage - Rated DC :

-50V

Resistor - Emitter Base (R2) :

10 k Ω

Length :

2.9mm

Transition Frequency :

200MHz

Resistor - Base (R1) :

10 k Ω

Factory Lead Time :

26 Weeks

Emitter Base Voltage (VEBO) :

10V

Height :

900μm

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount