BCR135WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pbfree Code :

yes

Resistor - Emitter Base (R2) :

47 kOhms

Qualification Status :

COMMERCIAL

DC Current Gain-Min (hFE) :

70

Terminal Position :

Dual

Collector Current-Max (IC) :

0.1 A

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

Number of Terminals :

3

Package / Case :

SC-70, SOT-323

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Terminal Finish :

MATTE TIN

Frequency - Transition :

150 MHz

Resistor - Base (R1) :

10 kOhms

Product Status :

Active

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Current - Collector (Ic) (Max) :

100 mA

Polarity/Channel Type :

NPN

Package :

Bulk

Series :

-

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Voltage - Collector Emitter Breakdown (Max) :

50 V

Manufacturer :

Rochester Electronics LLC

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Terminal Form :

Gull wing

Collector-Emitter Voltage-Max :

50 V

Transistor Application :

SWITCHING

Supplier Device Package :

PG-SOT323-3-1

Surface Mount :

yes

Transistor Type :

NPN - Pre-Biased

Package Shape :

RECTANGULAR

Power - Max :

250 mW

Mounting Type :

Surface Mount