BCR135E6327HTSA1
- Mfr.Part #
- BCR135E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 0.2W SOT23-3
- Stock
- 76,800
- In Stock :
- 76,800
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current Rating :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Resistor - Base (R1) :
- 10 k Ω
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- Halogen Free :
- Not Halogen Free
- hFE Min :
- 70
- Collector Emitter Voltage (VCEO) :
- 300mV
- Frequency - Transition :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Transition Frequency :
- 150MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BCR135
- Radiation Hardening :
- No
- Published :
- 2011
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 200mW
- Min Operating Temperature :
- -65°C
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 5mA 5V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Length :
- 2.9mm
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- NPN - Pre-Biased
- Factory Lead Time :
- 26 Weeks
- Voltage - Rated DC :
- 50V
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Contact Plating :
- Tin
- Polarity :
- NPN
- Width :
- 1.3mm
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Pbfree Code :
- yes
- Datasheets
- BCR135E6327HTSA1

BCR135E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Infineon Technologies stock available at
BCR135E6327HTSA1 Description
The BCR135E6327HTSA1 is an NPN Silicon Digital Transistor built-in bias resistor (R1=10 kΩ, R2=47 kΩ).
BCR135E6327HTSA1 Features
-
Built-in bias resistor (R1=10 kΩ, R2=47 kΩ)
-
BCR135S: Two internally isolated transistors with good matching in one multichip package
-
BCR135S: For orientation in reel see package information below
-
Pb-free (RoHS compliant) package
-
Qualified according to AEC Q101
BCR135E6327HTSA1 Applications
-
Switching circuit
-
Inverter
-
Interface circuit driver circuit
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