BCR133WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain-Min (hFE) :

30

Qualification Status :

Not Qualified

Number of Terminals :

3

Transition Frequency :

130MHz

Transistor Element Material :

SILICON

Terminal Position :

Dual

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Power Dissipation-Max (Abs) :

0.25W

Number of Elements :

1

Polarity/Channel Type :

NPN

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-G3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Collector-Emitter Voltage-Max :

50V

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Collector Current-Max (IC) :

0.1A