BCR133E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

2 Weeks

Polarity :

NPN

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Pins :

3

Max Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

10V

Lead Free :

Lead Free

Number of Elements :

1

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

130MHz

hFE Min :

30

Current - Collector Cutoff (Max) :

100nA ICBO

Mount :

Surface Mount

Height :

900μm

Resistor - Base (R1) :

10 k Ω

Length :

2.9mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Halogen Free :

Not Halogen Free

Base Part Number :

BCR133

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Max Collector Current :

100mA

Voltage - Rated DC :

50V

Transition Frequency :

130MHz

Transistor Type :

NPN - Pre-Biased

Current Rating :

100mA

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Voltage (VCEO) :

300mV

Published :

2011

Max Power Dissipation :

200mW

Collector Emitter Saturation Voltage :

300mV

Terminal Position :

Dual

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Width :

1.3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Number of Terminations :

3

Radiation Hardening :

No

ECCN Code :

EAR99