BCR116WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

hFE Min :

70

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 10

Element Configuration :

Single

Published :

2011

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

300mV

Mounting Type :

Surface Mount

Terminal Position :

Dual

Collector Emitter Saturation Voltage :

300mV

Min Operating Temperature :

-65°C

Number of Terminations :

3

Frequency - Transition :

150MHz

Resistor - Base (R1) :

4.7 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

47 k Ω

JESD-609 Code :

e3

Polarity :

NPN

Max Power Dissipation :

250mW

Contact Plating :

Tin

Number of Elements :

1

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Factory Lead Time :

26 Weeks

Terminal Form :

Gull wing

Lead Free :

Lead Free

Package / Case :

SC-70, SOT-323

Transition Frequency :

150MHz

Height :

800μm

Number of Pins :

3

Width :

1.25mm

Base Part Number :

BCR116

Collector Emitter Breakdown Voltage :

50V

Length :

2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Mount :

Surface Mount

Max Collector Current :

100mA