BCR116E6433HTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mounting Type :

Surface Mount

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

200mW

Voltage - Collector Emitter Breakdown (Max) :

50V

ECCN Code :

EAR99

Number of Elements :

1

Published :

2011

Terminal Position :

Dual

Resistor - Base (R1) :

4.7 k Ω

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

Frequency - Transition :

150MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

100nA ICBO

Surface Mount :

yes

Transistor Type :

NPN - Pre-Biased

Transition Frequency :

160MHz

Number of Terminations :

3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Factory Lead Time :

26 Weeks

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Qualification Status :

Not Qualified

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Base Part Number :

BCR116

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Resistor - Emitter Base (R2) :

47 k Ω