BCR116E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Halogen Free :

Not Halogen Free

Number of Terminations :

3

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

160MHz

Height :

1.1mm

Radiation Hardening :

No

Number of Elements :

1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

hFE Min :

70

Current Rating :

100mA

Mounting Type :

Surface Mount

Resistor - Base (R1) :

4.7 k Ω

Polarity :

NPN

Collector Base Voltage (VCBO) :

50V

Transistor Type :

NPN - Pre-Biased

Base Part Number :

BCR116

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Max Junction Temperature (Tj) :

150°C

Min Operating Temperature :

-65°C

Factory Lead Time :

26 Weeks

Max Collector Current :

100mA

Published :

2001

Gain Bandwidth Product :

150MHz

Voltage - Rated DC :

50V

Collector Emitter Saturation Voltage :

300mV

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200mW

Pbfree Code :

yes

Mount :

Surface Mount

Contact Plating :

Tin

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

47 k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Element Configuration :

Single

Number of Pins :

3

Max Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

5V