BCR112E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

ECCN Code :

EAR99

Published :

2011

Collector Emitter Saturation Voltage :

300mV

Number of Elements :

1

Voltage - Rated DC :

50V

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

50V

Height :

1.1mm

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

BCR112

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

50V

Frequency - Transition :

140MHz

Max Power Dissipation :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Max Operating Temperature :

150°C

Width :

1.3mm

Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Halogen Free :

Not Halogen Free

Pbfree Code :

yes

Max Junction Temperature (Tj) :

150°C

hFE Min :

20

Element Configuration :

Single

Mount :

Surface Mount

Terminal Position :

Dual

Transistor Type :

NPN - Pre-Biased

Number of Pins :

3

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Polarity :

NPN

Transition Frequency :

140MHz

Terminal Form :

Gull wing

Resistor - Base (R1) :

4.7 k Ω

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Length :

2.9mm

Resistor - Emitter Base (R2) :

4.7 k Ω

Contact Plating :

Tin

Factory Lead Time :

26 Weeks

Transistor Application :

SWITCHING

Radiation Hardening :

No