BCR112E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation :

200mW

Collector Base Voltage (VCBO) :

50V

Max Breakdown Voltage :

50V

Factory Lead Time :

26 Weeks

Current Rating :

100mA

Number of Pins :

3

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Resistor - Base (R1) :

4.7 k Ω

Published :

2011

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Min Operating Temperature :

-65°C

Max Power Dissipation :

200mW

Transistor Type :

NPN - Pre-Biased

Voltage - Rated DC :

50V

Terminal Position :

Dual

hFE Min :

20

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Pbfree Code :

yes

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Number of Terminations :

3

Halogen Free :

Not Halogen Free

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

300mV

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

4.7 k Ω

Element Configuration :

Single

Base Part Number :

BCR112

ECCN Code :

EAR99

Width :

1.3mm

Current - Collector Cutoff (Max) :

100nA ICBO

Transition Frequency :

140MHz

Collector Emitter Breakdown Voltage :

50V

Frequency - Transition :

140MHz

Max Collector Current :

100mA

JESD-609 Code :

e3

Polarity :

NPN