BCR 129F E6327

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Mfr.Part #
BCR 129F E6327
Manufacturer
Infineon Technologies
Package / Case
SOT-723
Datasheet
Download
Description
TRANS PREBIAS NPN 250MW TSFP-3
Stock
18,000
In Stock :
18,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Mounting Type :
Surface Mount
Surface Mount :
yes
Frequency - Transition :
150MHz
Power - Max :
250mW
Number of Terminations :
3
Published :
2008
Polarity/Channel Type :
NPN
Configuration :
SINGLE WITH BUILT-IN RESISTOR
Voltage - Collector Emitter Breakdown (Max) :
50V
RoHS Status :
RoHS Compliant
Additional Feature :
BUILT-IN BIAS RESISTOR
Number of Elements :
1
Resistor - Base (R1) :
10 k Ω
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 5mA 5V
Transition Frequency :
150MHz
JESD-30 Code :
R-PDSO-F3
Terminal Position :
Dual
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500μA, 10mA
Base Part Number :
BCR129
Reach Compliance Code :
Compliant
Terminal Form :
Flat
Package / Case :
SOT-723
Transistor Application :
SWITCHING
Transistor Type :
NPN - Pre-Biased
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
100nA ICBO
Datasheets
BCR 129F E6327
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased Infineon Technologies BCR 129F E6327 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Base Part Number:BCR129, Package / Case:SOT-723, BCR 129F E6327 pinout, BCR 129F E6327 datasheet PDF, BCR 129F E6327 amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased Infineon Technologies BCR 129F E6327 ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCR 129F E6327


BCR 129F E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Infineon Technologies stock available at

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