BCP69T1G
- Mfr.Part #
- BCP69T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 1A SOT223
- Stock
- 49,586
- In Stock :
- 49,586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 60MHz
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Terminations :
- 4
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 1.5W
- Gain Bandwidth Product :
- 60MHz
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -20V
- Package / Case :
- TO-261-4, TO-261AA
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- -20V
- Width :
- 3.7084mm
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- BCP69
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Height :
- 1.651mm
- hFE Min :
- 50
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -1A
- Collector Base Voltage (VCBO) :
- 25V
- Max Power Dissipation :
- 1.5W
- Collector Emitter Saturation Voltage :
- -500mV
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Transition Frequency :
- 60MHz
- Packaging :
- Cut Tape (CT)
- Published :
- 2008
- Pin Count :
- 4
- Length :
- 6.6802mm
- Datasheets
- BCP69T1G

PNP -65°C~150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BCP69T1G Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP69T1G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 60MHz
BCP69T1G Applications
There are a lot of ON Semiconductor
BCP69T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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