BCP68,115
- Mfr.Part #
- BCP68,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP68 POWER BIPOLAR
- Stock
- 320
- In Stock :
- 320
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 20V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Base Part Number :
- BCP68
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 650mW
- hFE Min :
- 85
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Surface Mount :
- yes
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 600mV
- Pin Count :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Qualification Status :
- Not Qualified
- Ambient Temperature Range High :
- 150°C
- Height :
- 1.8mm
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 32V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Transition Frequency :
- 40MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2003
- Terminal Finish :
- Tin (Sn)
- Current - Collector (Ic) (Max) :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 4
- Max Junction Temperature (Tj) :
- 150°C
- Number of Pins :
- 4
- Power - Max :
- 1.4W
- Gain Bandwidth Product :
- 170MHz
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Datasheets
- BCP68,115

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP68,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 2A volts.
BCP68,115 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP68,115 Applications
There are a lot of Nexperia USA Inc.
BCP68,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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