BCP68,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

20V

Mounting Type :

Surface Mount

Ambient Temperature Range High :

150°C

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Current - Collector (Ic) (Max) :

1A

Case Connection :

COLLECTOR

Number of Pins :

4

Pin Count :

4

Power - Max :

1.4W

Configuration :

Single

Collector Emitter Saturation Voltage :

600mV

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

32V

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Power Dissipation :

650mW

Height :

1.8mm

Factory Lead Time :

4 Weeks

Gain Bandwidth Product :

170MHz

Number of Elements :

1

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Qualification Status :

Not Qualified

Max Collector Current :

2A

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

BCP68

Terminal Position :

Dual

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

40MHz

Max Junction Temperature (Tj) :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA 1V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Published :

2003

Terminal Form :

Gull wing

hFE Min :

85

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99