BCP68,115
- Mfr.Part #
- BCP68,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP68 POWER BIPOLAR
- Stock
- 320
- In Stock :
- 320
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- BCP68
- Published :
- 2003
- Collector Emitter Voltage (VCEO) :
- 20V
- Operating Temperature :
- 150°C TJ
- Height :
- 1.8mm
- hFE Min :
- 85
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 650mW
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Max Junction Temperature (Tj) :
- 150°C
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Power - Max :
- 1.4W
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 1A
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Ambient Temperature Range High :
- 150°C
- Collector Base Voltage (VCBO) :
- 32V
- Transition Frequency :
- 40MHz
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Gain Bandwidth Product :
- 170MHz
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 4
- Max Collector Current :
- 2A
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- NPN
- Datasheets
- BCP68,115
BCP68,115 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP68,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 2A volts.
BCP68,115 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP68,115 Applications
There are a lot of Nexperia USA Inc.
BCP68,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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