BCP68,115
- Mfr.Part #
- BCP68,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A SOT223
- Stock
- 320
- In Stock :
- 320
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Power - Max :
- 1.4W
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Configuration :
- Single
- Transition Frequency :
- 40MHz
- Transistor Type :
- NPN
- Ambient Temperature Range High :
- 150°C
- hFE Min :
- 85
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Base Part Number :
- BCP68
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Height :
- 1.8mm
- Number of Pins :
- 4
- Current - Collector (Ic) (Max) :
- 1A
- Gain Bandwidth Product :
- 170MHz
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 20V
- Power Dissipation :
- 650mW
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Datasheets
- BCP68,115

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP68,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 2A volts.
BCP68,115 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP68,115 Applications
There are a lot of Nexperia USA Inc.
BCP68,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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