BCP68,115
- Mfr.Part #
- BCP68,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A SOT223
- Stock
- 320
- In Stock :
- 320
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.4W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- BCP68
- Case Connection :
- COLLECTOR
- hFE Min :
- 85
- Height :
- 1.8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2003
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Junction Temperature (Tj) :
- 150°C
- Current - Collector (Ic) (Max) :
- 1A
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 2A
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 20V
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 650mW
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 600mV
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 170MHz
- Transition Frequency :
- 40MHz
- Mounting Type :
- Surface Mount
- Ambient Temperature Range High :
- 150°C
- Collector Base Voltage (VCBO) :
- 32V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Datasheets
- BCP68,115
BCP68,115 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP68,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 2A volts.
BCP68,115 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP68,115 Applications
There are a lot of Nexperia USA Inc.
BCP68,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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