BCP69
- Mfr.Part #
- BCP69
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 1.5A SOT223-4
- Stock
- 296,986
- In Stock :
- 296,986
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 20V
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 1W
- Base Part Number :
- BCP69
- Current Rating :
- 1A
- Max Collector Current :
- 1.5A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Width :
- 3.5mm
- Collector Emitter Voltage (VCEO) :
- 20V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -20V
- hFE Min :
- 85
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Weight :
- 188mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 4
- Number of Terminations :
- 4
- Length :
- 6.5mm
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -500mV
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Mount :
- Surface Mount
- Height :
- 1.6mm
- Collector Base Voltage (VCBO) :
- -30V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -5V
- Case Connection :
- COLLECTOR
- Datasheets
- BCP69

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP69 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
BCP69 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is 1A
BCP69 Applications
There are a lot of ON Semiconductor
BCP69 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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