BCP69-25,115
- Mfr.Part #
- BCP69-25,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT223
- Stock
- 822
- In Stock :
- 822
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Repetitive Reverse Voltage (Vrrm) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-261-4, TO-261AA
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Frequency :
- 140MHz
- Length :
- 6.7mm
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 40MHz
- Max Power Dissipation :
- 1.4W
- Number of Terminations :
- 4
- Power - Max :
- 650mW
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 500mA 1V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 1.35W
- Factory Lead Time :
- 4 Weeks
- Width :
- 3.7mm
- Mount :
- Surface Mount
- Max Forward Surge Current (Ifsm) :
- 2A
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 140MHz
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Base Part Number :
- BCP69
- Forward Voltage :
- 550mV
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 32V
- Height :
- 1.7mm
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2003
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 20V
- Forward Current :
- 500mA
- Max Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Datasheets
- BCP69-25,115
BCP69-25,115 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP69-25,115 Overview
In this device, the DC current gain is 160 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.40MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
BCP69-25,115 Features
the DC current gain for this device is 160 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP69-25,115 Applications
There are a lot of Nexperia USA Inc.
BCP69-25,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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