BCP68T1G
- Mfr.Part #
- BCP68T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A SOT223
- Stock
- 25,930
- In Stock :
- 25,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 4
- Contact Plating :
- Tin
- Factory Lead Time :
- 11 Weeks
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Length :
- 6.6802mm
- Max Breakdown Voltage :
- 20V
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 20V
- Base Part Number :
- BCP68
- Radiation Hardening :
- No
- Frequency :
- 60MHz
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Width :
- 3.7084mm
- Element Configuration :
- Single
- Voltage - Rated DC :
- 20V
- hFE Min :
- 50
- Current Rating :
- 1A
- Power Dissipation :
- 1.5W
- Max Power Dissipation :
- 1.5W
- Published :
- 2005
- Transition Frequency :
- 60MHz
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1.651mm
- Collector Base Voltage (VCBO) :
- 25V
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 60MHz
- Datasheets
- BCP68T1G

NPN -65°C~150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BCP68T1G Overview
DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 60MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 1A volts.
BCP68T1G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 60MHz
BCP68T1G Applications
There are a lot of ON Semiconductor
BCP68T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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