BCP68T1
- Mfr.Part #
- BCP68T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN AUDIO 1A 25V SOT223
- Stock
- 5,756
- In Stock :
- 5,756
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- Pbfree Code :
- yes
- Factory Lead Time :
- 11 Weeks
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 1.5W
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 60MHz
- Current Rating :
- 1A
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 20V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 25V
- Case Connection :
- COLLECTOR
- Length :
- 6.6802mm
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2005
- Base Part Number :
- BCP68
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Pin Count :
- 4
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 60MHz
- Max Breakdown Voltage :
- 20V
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Height :
- 1.651mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Element Configuration :
- Single
- Frequency :
- 60MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Width :
- 3.7084mm
- Voltage - Rated DC :
- 20V
- Power Dissipation :
- 1.5W
- Surface Mount :
- yes
- hFE Min :
- 50
- Lead Free :
- Lead Free
- Datasheets
- BCP68T1

NPN -65°C~150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BCP68T1G Overview
DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 60MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 1A volts.
BCP68T1G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 60MHz
BCP68T1G Applications
There are a lot of ON Semiconductor
BCP68T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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