BCP56TX
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- Mfr.Part #
- BCP56TX
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 790
- In Stock ：
- 790
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Packaging :
- Cut Tape (CT)
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Frequency - Transition :
- 100MHz
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Factory Lead Time :
- 4 Weeks
- Reference Standard :
- AEC-Q101; IEC-60134
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Case Connection :
- COLLECTOR
- Power - Max :
- 1.8W
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Max Power Dissipation :
- 1.35W
- Collector Emitter Voltage (VCEO) :
- 500mV
- JESD-30 Code :
- R-PDSO-G4
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 155MHz
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCP56TX
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BCP56TX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 155MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP56TX Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 155MHz
BCP56TX Applications
There are a lot of Nexperia USA Inc.
BCP56TX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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