BCP51-10,135
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- Mfr.Part #
- BCP51-10,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP51-10 - SMALL SI
- Stock
- 18,373
- In Stock ：
- 18,373
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 1.35W
- Height :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Power - Max :
- 1W
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1W
- Length :
- 6.35mm
- Max Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 145MHz
- Number of Pins :
- 4
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 4
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BCP51
- Frequency :
- 145MHz
- Gain Bandwidth Product :
- 145MHz
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 45V
- Number of Elements :
- 1
- Datasheets
- BCP51-10,135
BCP51-10,135 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51-10,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP51-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP51-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP51-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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