BCP51-10,135
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- Mfr.Part #
- BCP51-10,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP51-10 - SMALL SI
- Stock
- 18,373
- In Stock ：
- 18,373
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 145MHz
- Number of Terminations :
- 4
- Radiation Hardening :
- No
- Power Dissipation :
- 1.35W
- Length :
- 6.35mm
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1W
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Power - Max :
- 1W
- Weight :
- 4.535924g
- Width :
- 6.35mm
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 45V
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 4
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Height :
- 6.35mm
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 145MHz
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Frequency :
- 145MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Breakdown Voltage :
- 45V
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BCP51
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BCP51-10,135
BCP51-10,135 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51-10,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP51-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP51-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP51-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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