BCP51-10,135
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- Mfr.Part #
- BCP51-10,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP51-10 - SMALL SI
- Stock
- 18,373
- In Stock ：
- 18,373
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Weight :
- 4.535924g
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 145MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 45V
- Frequency :
- 145MHz
- Height :
- 6.35mm
- Max Breakdown Voltage :
- 45V
- Width :
- 6.35mm
- Contact Plating :
- Tin
- Length :
- 6.35mm
- Transition Frequency :
- 145MHz
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.35W
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Number of Terminations :
- 4
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Base Part Number :
- BCP51
- Max Power Dissipation :
- 1W
- Power - Max :
- 1W
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Datasheets
- BCP51-10,135
BCP51-10,135 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51-10,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP51-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP51-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP51-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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