BCP51-10,135
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- Mfr.Part #
- BCP51-10,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP51-10 - SMALL SI
- Stock
- 18,373
- In Stock ：
- 18,373
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 145MHz
- Max Breakdown Voltage :
- 45V
- Length :
- 6.35mm
- Collector Emitter Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Published :
- 2011
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- BCP51
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 45V
- Height :
- 6.35mm
- REACH SVHC :
- No SVHC
- Pin Count :
- 4
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 1W
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 145MHz
- Terminal Position :
- Dual
- Frequency :
- 145MHz
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1W
- Width :
- 6.35mm
- Power Dissipation :
- 1.35W
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1A
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BCP51-10,135
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51-10,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP51-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP51-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP51-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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