BCP51-10,135
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- Mfr.Part #
- BCP51-10,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP51-10 - SMALL SI
- Stock
- 18,373
- In Stock ：
- 18,373
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 4
- Length :
- 6.35mm
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Height :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Power - Max :
- 1W
- Base Part Number :
- BCP51
- Mounting Type :
- Surface Mount
- Frequency :
- 145MHz
- Published :
- 2011
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 145MHz
- Transistor Type :
- PNP
- Pin Count :
- 4
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 45V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Transition Frequency :
- 145MHz
- Width :
- 6.35mm
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 1.35W
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- Datasheets
- BCP51-10,135
BCP51-10,135 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51-10,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP51-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP51-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP51-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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