BCP51-16E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

MATTE TIN

Collector Current-Max (IC) :

1 A

Operating Temperature :

150°C (TJ)

Qualification Status :

COMMERCIAL

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

45 V

Supplier Device Package :

SOT-223

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Pbfree Code :

yes

Terminal Form :

Gull wing

Transition Frequency :

125

Transistor Type :

PNP

Max Operating Temperature :

150 °C

Manufacturer :

Rochester Electronics LLC

Min Operating Temperature :

-65 °C

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Polarity/Channel Type :

PNP

Power Dissipation :

2

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 2V

Continuous Collector Current :

1

RoHS :

Compliant

Product Status :

Active

Frequency - Transition :

125MHz

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

5 V

Max Power Dissipation :

2 W

Voltage Rating (DC) :

-45 V

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PDSO-G4

Polarity :

PNP

Configuration :

Single

Reach Compliance Code :

Unknown

Package :

Bulk

Collector Base Voltage (VCBO) :

45 V

Element Configuration :

Single

Package / Case :

TO-261-4, TO-261AA

Mount :

Surface Mount

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

1 A

Voltage - Collector Emitter Breakdown (Max) :

45 V

Series :

-

Current - Collector (Ic) (Max) :

1 A

Collector Emitter Voltage (VCEO) :

45 V

Number of Pins :

4

Number of Elements :

1

Number of Terminals :

4

Transistor Polarity :

PNP

Power - Max :

2 W

Current Rating :

-1 A

Terminal Position :

Dual

Gain Bandwidth Product :

125 MHz

DC Current Gain-Min (hFE) :

100

Collector-Emitter Voltage-Max :

45 V