BCP51-10
- Mfr.Part #
- BCP51-10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR
- Stock
- 32,379
- In Stock :
- 32,379
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 2W
- Max Collector Current :
- 1A
- Additional Feature :
- High Reliability
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Base Part Number :
- BCP51
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-261-4, TO-261AA
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -500mV
- Number of Pins :
- 4
- Operating Temperature :
- -65°C~150°C TJ
- Gain Bandwidth Product :
- 125MHz
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 4
- Length :
- 6.55mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Height :
- 1.65mm
- Transition Frequency :
- 150MHz
- Pbfree Code :
- yes
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Weight :
- 7.994566mg
- Frequency :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Width :
- 3.55mm
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Number of Terminations :
- 4
- Datasheets
- BCP51-10

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5110TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP5110TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5110TA Applications
There are a lot of Diodes Incorporated
BCP5110TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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