BCP56T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Height :

1.63mm

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

80V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Gain Bandwidth Product :

130MHz

Terminal Position :

Dual

Pin Count :

4

Published :

2005

Collector Emitter Saturation Voltage :

500mV

Number of Elements :

1

Max Collector Current :

1A

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.5W

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

hFE Min :

25

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

80V

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Current Rating :

1A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Power Dissipation :

1.5W

Length :

6.5mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN

Surface Mount :

yes

Transistor Element Material :

SILICON

Max Breakdown Voltage :

80V

Frequency :

130MHz

Package / Case :

TO-261-4, TO-261AA

Collector Base Voltage (VCBO) :

100V

Voltage - Rated DC :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Number of Pins :

4

Radiation Hardening :

No

Transition Frequency :

130MHz

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Terminations :

4

Pbfree Code :

yes

Base Part Number :

BCP56

Width :

3.5mm