BCP56T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Published :

2005

Number of Elements :

1

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

100V

Voltage - Rated DC :

80V

ECCN Code :

EAR99

Height :

1.63mm

Transition Frequency :

130MHz

Element Configuration :

Single

Max Breakdown Voltage :

80V

Current Rating :

1A

Transistor Type :

NPN

Max Power Dissipation :

1.5W

Length :

6.5mm

Pin Count :

4

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

1A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Power Dissipation :

1.5W

Surface Mount :

yes

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

500mV

Package / Case :

TO-261-4, TO-261AA

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

80V

Case Connection :

COLLECTOR

Gain Bandwidth Product :

130MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Number of Pins :

4

hFE Min :

25

Width :

3.5mm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Base Part Number :

BCP56

Pbfree Code :

yes

Contact Plating :

Tin

Number of Terminations :

4

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

80V

Frequency :

130MHz

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)