BCP56T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Voltage (VCEO) :

80V

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

100V

Contact Plating :

Tin

Surface Mount :

yes

Voltage - Rated DC :

80V

Transition Frequency :

130MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Max Breakdown Voltage :

80V

Width :

3.5mm

Terminal Form :

Gull wing

Number of Terminations :

4

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Pbfree Code :

yes

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

500mV

Pin Count :

4

Radiation Hardening :

No

Height :

1.75mm

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Published :

2005

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Collector Current :

1A

Current Rating :

1A

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

1.5W

Base Part Number :

BCP56

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Frequency :

130MHz

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

130MHz

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Power Dissipation :

1.5W

Length :

6.5mm

Element Configuration :

Single

Max Junction Temperature (Tj) :

150°C

Number of Pins :

4

hFE Min :

40

Transistor Element Material :

SILICON

Terminal Position :

Dual

Mounting Type :

Surface Mount