BCP56T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Lead Free :

Lead Free

Frequency :

130MHz

Transistor Type :

NPN

Max Breakdown Voltage :

80V

Voltage - Rated DC :

80V

Terminal Position :

Dual

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

100V

hFE Min :

40

Pbfree Code :

yes

Height :

1.75mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Number of Pins :

4

Number of Terminations :

4

Collector Emitter Saturation Voltage :

500mV

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Published :

2005

Max Power Dissipation :

1.5W

Gain Bandwidth Product :

130MHz

Max Junction Temperature (Tj) :

150°C

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

80V

Surface Mount :

yes

Current Rating :

1A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Base Part Number :

BCP56

Pin Count :

4

Radiation Hardening :

No

Packaging :

Cut Tape (CT)

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Length :

6.5mm

Width :

3.5mm

Max Collector Current :

1A

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

JESD-609 Code :

e3

Transition Frequency :

130MHz

Power Dissipation :

1.5W

Collector Emitter Voltage (VCEO) :

80V

RoHS Status :

ROHS3 Compliant