BCP56T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Terminal Position :

Dual

Max Collector Current :

1A

Gain Bandwidth Product :

130MHz

Width :

3.5mm

Frequency :

130MHz

Pbfree Code :

yes

Transition Frequency :

130MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Contact Plating :

Tin

REACH SVHC :

No SVHC

Pin Count :

4

Collector Emitter Breakdown Voltage :

80V

Power Dissipation :

1.5W

Operating Temperature :

-65°C~150°C TJ

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Number of Pins :

4

Factory Lead Time :

8 Weeks

Collector Base Voltage (VCBO) :

100V

hFE Min :

40

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Current Rating :

1A

Voltage - Rated DC :

80V

Packaging :

Cut Tape (CT)

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Height :

1.75mm

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

BCP56

Package / Case :

TO-261-4, TO-261AA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Surface Mount :

yes

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Max Power Dissipation :

1.5W

Element Configuration :

Single

Case Connection :

COLLECTOR

Number of Terminations :

4

Number of Elements :

1

Length :

6.5mm