BCP5616TC
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- Mfr.Part #
- BCP5616TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 447
- In Stock ：
- 447
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current Rating :
- 1A
- Max Power Dissipation :
- 2W
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 125MHz
- Continuous Collector Current :
- 1A
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- BCP56
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Voltage - Rated DC :
- 80V
- Pin Count :
- 4
- Mount :
- Surface Mount
- Transition Frequency :
- 150MHz
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Published :
- 2005
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 14 Weeks
- Datasheets
- BCP5616TC
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616TC Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP5616TC Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TC Applications
There are a lot of Diodes Incorporated
BCP5616TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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