BCP5616TC
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- Mfr.Part #
- BCP5616TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 447
- In Stock ：
- 447
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 80V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 14 Weeks
- Continuous Collector Current :
- 1A
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 7.994566mg
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 100V
- Pbfree Code :
- yes
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 125MHz
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- BCP56
- Transistor Type :
- NPN
- Max Power Dissipation :
- 2W
- Configuration :
- Single
- Current Rating :
- 1A
- Max Collector Current :
- 1A
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Datasheets
- BCP5616TC
BCP5616TC Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616TC Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP5616TC Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TC Applications
There are a lot of Diodes Incorporated
BCP5616TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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