BCP5616TA
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- Mfr.Part #
- BCP5616TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 460
- In Stock ：
- 460
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.65mm
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 80V
- Base Part Number :
- BCP56
- Power Dissipation :
- 2W
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1A
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 500mV
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 125MHz
- Transition Frequency :
- 150MHz
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 80V
- Weight :
- 7.994566mg
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Position :
- Dual
- Factory Lead Time :
- 14 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2012
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- High Reliability
- Continuous Collector Current :
- 1A
- Width :
- 3.55mm
- Length :
- 6.55mm
- Frequency :
- 150MHz
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Pin Count :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 2W
- Datasheets
- BCP5616TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCP5616TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TA Applications
There are a lot of Diodes Incorporated
BCP5616TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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