BCP5616TA
- Mfr.Part #
- BCP5616TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 460
- In Stock :
- 460
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.65mm
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 80V
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Transition Frequency :
- 150MHz
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 1A
- Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 125MHz
- Base Part Number :
- BCP56
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 2W
- Pin Count :
- 4
- Collector Emitter Saturation Voltage :
- 500mV
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 1A
- Lead Free :
- Lead Free
- Width :
- 3.55mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Factory Lead Time :
- 14 Weeks
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Weight :
- 7.994566mg
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Max Breakdown Voltage :
- 80V
- Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Length :
- 6.55mm
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 100V
- Additional Feature :
- High Reliability
- Contact Plating :
- Tin
- Datasheets
- BCP5616TA
BCP5616TA Documents

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCP5616TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TA Applications
There are a lot of Diodes Incorporated
BCP5616TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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