BCP5616QTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Voltage (VCEO) :

500mV

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

80V

Packaging :

Tape and Reel (TR)

Power - Max :

2W

JESD-30 Code :

R-PDSO-G4

Frequency - Transition :

150MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

13 Weeks

Published :

2015

Case Connection :

COLLECTOR

Terminal Position :

Dual

ECCN Code :

EAR99

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Configuration :

Single

Number of Terminations :

4

Polarity/Channel Type :

NPN

Max Power Dissipation :

2W

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Max Collector Current :

1A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

80V

Mount :

Surface Mount

Additional Feature :

High Reliability

Transition Frequency :

150MHz

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V