BCP5616H6327XTSA1
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- Mfr.Part #
- BCP5616H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-4
- Stock
- 8
- In Stock ：
- 8
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Published :
- 2008
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- BCP56
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 80V
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Width :
- 3.5mm
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 4
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 2W
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Height :
- 1.8mm
- Length :
- 6.5mm
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage :
- 80V
- Terminal Position :
- Dual
- Current :
- 1A
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 1A
- Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- 500mV
- RoHS Status :
- ROHS3 Compliant
- Manufacturer Package Identifier :
- PG-SOT223-4
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- NPN
- Datasheets
- BCP5616H6327XTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616H6327XTSA1 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1A volts is possible.
BCP5616H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCP5616H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCP5616H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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