BCP56-16T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Max Collector Current :

1A

Mounting Type :

Surface Mount

Gain Bandwidth Product :

130MHz

hFE Min :

25

Current - Collector Cutoff (Max) :

100nA ICBO

Current Rating :

1A

Contact Plating :

Tin

Transition Frequency :

130MHz

Width :

3.5mm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

80V

Pin Count :

4

Length :

6.5mm

Element Configuration :

Single

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Surface Mount :

yes

Number of Pins :

4

Transistor Type :

NPN

Operating Temperature :

-65°C~150°C TJ

Frequency :

130MHz

Voltage - Rated DC :

80V

Power Dissipation :

1.5W

Collector Emitter Breakdown Voltage :

80V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BCP56

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Published :

2005

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

100V

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Saturation Voltage :

500mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Max Power Dissipation :

1.5W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Elements :

1

Number of Terminations :

4

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Height :

1.63mm

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Time@Peak Reflow Temperature-Max (s) :

40