BCP56-16T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

8 Weeks

Transition Frequency :

130MHz

ECCN Code :

EAR99

Published :

2005

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

100V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Frequency :

130MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Package / Case :

TO-261-4, TO-261AA

Width :

3.5mm

Max Power Dissipation :

1.5W

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Contact Plating :

Tin

Terminal Form :

Gull wing

Height :

1.63mm

Number of Terminations :

4

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Max Collector Current :

1A

Gain Bandwidth Product :

130MHz

Current Rating :

1A

Number of Pins :

4

Collector Emitter Saturation Voltage :

500mV

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BCP56

Max Breakdown Voltage :

80V

Element Configuration :

Single

JESD-609 Code :

e3

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

80V

Length :

6.5mm

Pin Count :

4

hFE Min :

25

Voltage - Rated DC :

80V

Number of Elements :

1

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.5W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Surface Mount :

yes