BCP56-16T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2005

ECCN Code :

EAR99

Number of Elements :

1

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

500mV

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

80V

Power Dissipation :

1.5W

Package / Case :

TO-261-4, TO-261AA

Transition Frequency :

130MHz

Height :

1.57mm

Collector Base Voltage (VCBO) :

100V

Width :

3.5mm

Max Breakdown Voltage :

80V

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Lead Free :

Lead Free

Base Part Number :

BCP56

Collector Emitter Breakdown Voltage :

80V

Element Configuration :

Single

Pbfree Code :

yes

Frequency :

130MHz

Voltage - Rated DC :

80V

Transistor Type :

NPN

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Gain Bandwidth Product :

130MHz

Case Connection :

COLLECTOR

Number of Terminations :

4

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Pins :

4

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Pin Count :

4

Terminal Position :

Dual

Surface Mount :

yes

Mounting Type :

Surface Mount

Length :

6.5mm

hFE Min :

25

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Radiation Hardening :

No

Max Power Dissipation :

1.5W

Current Rating :

1A

Max Collector Current :

1A

Packaging :

Cut Tape (CT)

Operating Temperature :

-65°C~150°C TJ