BCP56-16T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

1.5W

Lead Free :

Lead Free

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Frequency :

130MHz

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

500mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Transistor Type :

NPN

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Transition Frequency :

130MHz

Number of Terminations :

4

Max Collector Current :

1A

Voltage - Rated DC :

80V

Number of Pins :

4

Width :

3.5mm

Height :

1.57mm

Surface Mount :

yes

Max Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

80V

Power Dissipation :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Base Part Number :

BCP56

Pbfree Code :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

Published :

2005

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

100V

Gain Bandwidth Product :

130MHz

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-65°C~150°C TJ

Pin Count :

4

Factory Lead Time :

8 Weeks

Length :

6.5mm

hFE Min :

25

Emitter Base Voltage (VEBO) :

5V

Terminal Form :

Gull wing

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Current Rating :

1A

Transistor Application :

AMPLIFIER