BCP56-16T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

4

Transition Frequency :

130MHz

Number of Elements :

1

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

80V

Frequency :

130MHz

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

80V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-261-4, TO-261AA

Voltage - Rated DC :

80V

Lead Free :

Lead Free

Length :

6.5mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Max Breakdown Voltage :

80V

hFE Min :

25

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gain Bandwidth Product :

130MHz

Published :

2005

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

500mV

Current Rating :

1A

Polarity/Channel Type :

NPN

Max Power Dissipation :

1.5W

Contact Plating :

Tin

Pbfree Code :

yes

Radiation Hardening :

No

Power Dissipation :

1.5W

Surface Mount :

yes

Base Part Number :

BCP56

JESD-609 Code :

e3

Number of Terminations :

4

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Single

Terminal Position :

Dual

Max Collector Current :

1A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Element Material :

SILICON

Height :

1.57mm

Transistor Application :

AMPLIFIER

Width :

3.5mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Factory Lead Time :

8 Weeks

Number of Pins :

4